12英寸SiC布局加速，哪种长晶工艺将成主流？

Core Viewpoint - The article highlights the rapid advancements in 12-inch SiC (Silicon Carbide) technology, particularly focusing on the delivery of long crystal growth equipment and the comparison between induction heating and resistance heating methods in the growth process [2][9]. Industry Developments - In 2023, numerous manufacturers have made significant progress in 12-inch SiC technology, with 14 Chinese companies reporting advancements [5]. - Hebei Jingchi Electromechanical Co., Ltd. successfully delivered the first 12-inch resistance heating high-purity SiC crystal growth furnace in Hebei, which will serve leading international semiconductor companies [3][4]. Equipment and Technology Comparison - The article compares induction heating and resistance heating methods in SiC crystal growth, focusing on three main dimensions: equipment structure, temperature control, and operational costs [9][15]. - Induction heating is currently the mainstream method for SiC single crystal growth, while resistance heating is gaining traction due to its advantages in large-size crystal growth [9][15]. Equipment Structure - Induction heating uses an external coil, while resistance heating employs a graphite heater, allowing for a more uniform temperature field in larger crystals [10][12]. - The structural differences impact the overall efficiency and effectiveness of the crystal growth process [10]. Temperature Control - Temperature control is critical in SiC crystal growth, with resistance heating offering better control over the radial temperature gradient, which is essential for large crystal growth [13][14]. - Induction heating is simpler to operate but may not provide the same level of precision in temperature management [14]. Operational Costs - Induction heating generally has lower energy consumption and maintenance costs compared to resistance heating, which requires more frequent monitoring and replacement of heating elements [15]. - The longevity and durability of the equipment also differ, with resistance heating showing higher tolerance to crucible wear [15]. Future Outlook - The article emphasizes the ongoing research and development in the SiC industry, particularly in the context of the upcoming "2025 SiC Substrate and Epitaxy Industry Research White Paper," which aims to explore breakthroughs in large-size single crystal growth [16].