存储路线图，三星最新分享

Core Viewpoint - Samsung Electronics presented the evolution of next-generation DRAM and NAND flash memory at the "IMW 2025" event, highlighting advancements in memory density and architecture [1][10]. DRAM Evolution - The evolution of DRAM units has transitioned from planar n-channel MOS FETs in the 1990s to advanced structures that mitigate short-channel effects and leakage currents. The area of DRAM units has been reduced from "8F2" to "6F2," achieving a 25% reduction in unit area while maintaining the same processing dimensions [1][3]. - The current 10nm generation DRAM units maintain the "6F2" layout but are expected to shift to a "4F2" layout in the next generation, referred to as "0A" generation, due to limitations in maintaining the existing structure [3][5]. 3D DRAM Development - Samsung is exploring 3D DRAM technology, which involves vertically stacking longer DRAM units to increase memory capacity. This approach aims to enhance memory density significantly [7][9]. NAND Flash Memory Evolution - NAND flash memory has evolved from planar structures to 3D configurations, allowing for increased charge storage and reduced interference between adjacent cells. The number of stacked layers in 3D NAND has grown from 32 layers in the early 2010s to over 300 layers by the mid-2020s, significantly increasing density and capacity [11][13]. - Challenges similar to those faced by planar NAND persist, including difficulties in etching deeper holes for unit string channels and increased interference due to reduced spacing between storage holes. Innovations such as using ferroelectric films in charge trap cells are being explored to mitigate these issues [14][17]. Future Innovations - Various companies and experts shared advancements in memory technologies, including imec's pure metal gate technology for 3D NAND reliability and NEO Semiconductor's 3D X-DRAM technology, which resembles 3D NAND structures [18][19].