助力SiC器件封装突破，聚峰发布创新方案

Core Viewpoint - The article highlights the advancements in power semiconductor packaging, particularly focusing on the introduction of FC-100U, a high-performance metal interconnect material designed for third-generation semiconductor applications, specifically SiC and GaN [2][15]. Group 1: Product Features - FC-100U demonstrates excellent interface bonding performance across various metal layer structures, including silver, gold, and copper, ensuring stable connections under high thermal loads and mechanical stress [5]. - The sintering process for FC-100U is efficient, requiring only 10 minutes at 260°C and 20 MPa pressure, achieving a low porosity of 7%, which enhances thermal conductivity and provides a robust interconnect interface for power devices [10]. - The material is environmentally friendly, adhering to international standards and regulations such as RoHS, and contributes to energy efficiency and reduced power loss in electronic manufacturing [15]. Group 2: Reliability Testing - FC-100U has passed multiple international reliability tests, showing stability under extreme conditions, including temperature cycling from -55°C to +150°C with minimal thermal resistance change [11]. - In high-temperature storage tests at 150°C for 1000 hours, the shear strength variation was less than 3%, indicating no significant performance degradation [11]. - The material also performed well in the double 85 test (85°C/85% RH for 1000 hours), with shear strength variation under 11%, demonstrating strong resistance to humidity and heat [13]. Group 3: Market Potential - FC-100U's high performance, mass production capability, and environmental advantages position it favorably for broader market applications, particularly in high-end power devices like SiC and GaN [15].