瑞萨放弃SiC计划

Core Viewpoint - Renesas Electronics has abandoned its plans to use silicon carbide (SiC) for power semiconductor production, which was initially set to begin in early 2025 at its Takasaki plant in Gunma Prefecture [1][2]. Group 1: Renesas Electronics' Strategy - Renesas Electronics previously announced plans to start producing next-generation power semiconductor products using SiC to reduce losses, but specific investment amounts and production scales were not determined [1]. - The company has signed a $2 billion deposit agreement with Wolfspeed to ensure a 10-year supply of SiC wafers and epitaxial wafers, which is crucial for its transition from silicon to SiC power devices [2]. Group 2: Wolfspeed's Role - The long-term supply agreement requires Wolfspeed to supply 150mm SiC bare wafers and epitaxial wafers starting in 2025, with plans to provide 200mm wafers once its manufacturing center in North Carolina is fully operational [2]. - Wolfspeed's executives emphasized the importance of having Renesas as a customer to lead the global transition from silicon to SiC, especially as demand for SiC in automotive, industrial, and energy sectors rises [2]. Group 3: Market Implications - The $2 billion deposit from Renesas will support Wolfspeed's capacity expansion plans, including the establishment of the largest SiC materials factory in the world [2]. - The shift to 200mm SiC wafers, which are 1.7 times larger than 150mm wafers, will allow for the production of more chips per wafer, thereby reducing device costs [2].