HBM，或被这种内存取代

Core Viewpoint - Intel and SoftBank are collaborating to develop a stacked DRAM as a substitute for high bandwidth memory (HBM), aiming for prototype completion by 2027 and commercialization by 2030 [1][2]. Group 1: Collaboration and Development - The joint venture, named Saimemory, will leverage Intel's technology and patents from Japanese universities to create prototype chips [1]. - The new stacked DRAM is expected to reduce power consumption by half compared to existing HBM chips, addressing the high power demands of AI processors [1][2]. Group 2: Market Context and Competition - Currently, only Samsung, SK Hynix, and Micron can mass-produce the latest generation of HBM chips, leading to a supply shortage amid rising AI chip demand [2]. - Saimemory aims to capture the Japanese data center market and re-establish Japan's presence in the mainstream memory chip supply chain after over two decades [2]. Group 3: Industry Trends - The focus of Saimemory is on reducing power consumption, which is a critical need for data centers, especially as AI computing power demands continue to rise [2]. - Other companies, such as Samsung and NEO Semiconductor, are also exploring 3D stacked DRAM, but their emphasis is on increasing chip capacity rather than power efficiency [2].