HBM不敌SK海力士，三星押注1c DRAM

Group 1 - Samsung aims to reverse the downturn in the HBM4 era by making significant progress in its 1c DRAM sector, achieving a yield rate of 50% to 70% in its sixth-generation 10nm DRAM wafers, up from less than 30% last year [1] - Samsung plans to increase the production of 1c DRAM at its Hwaseong and Pyeongtaek factories, with investments expected to begin by the end of the year [1] - The progress in 1c DRAM is seen as a precursor to Samsung's mass production plans for HBM4, which are set to start later this year [1] Group 2 - Samsung has redesigned its chips, accepting a delay of over a year to enhance performance, with the new DRAM to be produced at the Pyeongtaek Line 4 for mobile and server applications [3] - The production facilities related to HBM4 for the sixth-generation 10nm DRAM are located at Pyeongtaek Line 3 [3] - Samsung may reconsider its old strategy of leveraging economies of scale to cut costs and instead focus on performance in the HBM4 era [3] Group 3 - SK Hynix is taking a more cautious approach to 1c DRAM investments, planning to expand production only after the mass production of HBM4E [5] - SK Hynix completed the development of 1c DRAM by August 2024, achieving impressive test yields averaging over 80%, with a peak of 90% [6] - TrendForce predicts that HBM total shipments will exceed 30 billion gigabits by 2026, with HBM4 expected to become the mainstream solution by the second half of 2026 [6]