DRAM，三个方向

Core Insights - The memory market is expected to reach a record of $200 billion for the second consecutive year in 2025, driven by surging demand for AI training workloads in data centers, marking a strong rebound from the severe downturn experienced in 2022-2023 [2] - High Bandwidth Memory (HBM) is projected to dominate the market, with global HBM revenue expected to grow at an astonishing compound annual growth rate (CAGR) of 33% from 2024 to 2030, capturing an unprecedented 50% share of the DRAM market by 2030 [2] - The NAND industry continues to face headwinds due to weaker-than-expected consumer demand and rising inventory levels across the supply chain, prompting leading suppliers to implement aggressive supply-side adjustments [2] Market Dynamics - Major memory suppliers, including SK Hynix, Samsung, and Micron, are actively enhancing yields and expanding production capacity in anticipation of a shortage expected in 2025, intensifying competition in the high-capacity memory (HBM) market [6] - China is increasing its domestic memory manufacturing efforts to narrow the technology gap with global leaders, extending this strategy to personal computers and consumer electronics, thereby adding pressure to the global memory supply-demand landscape [6] Technological Innovations - Advanced packaging methods, such as CMOS bonding, are redefining memory innovations beyond planar scaling, with companies like Yangtze Memory Technologies achieving significant advancements in 3D NAND technology [7] - The transition to 3D DRAM architecture is seen as inevitable, with all major DRAM suppliers actively exploring various 3D integration pathways by 2025, including innovative unit architectures and advanced tool solutions to address unique manufacturing challenges [8]