又一SiC基地，投产

Core Viewpoint - The article highlights the launch of the silicon carbide semiconductor equipment and substrate production base project by Nuotian, which represents a significant investment in the semiconductor industry and aims to enhance technological innovation and production capabilities in the region [2]. Group 1: Project Overview - The Nuotian silicon carbide semiconductor equipment and substrate production base project has a total investment of approximately 150 million yuan, signed in February 2024 and located in Zhuzhou High-tech Zone [2]. - The project will produce silicon carbide semiconductor equipment and substrates, with applications in silicon carbide single crystal growth, substrate manufacturing, semiconductor material graphitization and purification, advanced ceramics, composite materials research, photovoltaic, and lithium battery high-temperature sintering [2]. Group 2: Company Background - Zhuzhou Nuotian Electric Heating Technology Co., Ltd. was established in 2014, focusing on the research, development, manufacturing, and innovation of high-end thermal equipment [2]. - The company aims to provide high-performance and reliable industrial furnace equipment and comprehensive solutions for cutting-edge fields such as semiconductors, new energy, and new materials [2]. Group 3: Future Prospects - The company is expected to become a national high-tech enterprise in 2024 and be recognized as a specialized and innovative enterprise in Hunan Province by 2025 [2]. - The project is anticipated to contribute significantly to the economic and social development of Zhuzhou and the advancement of China's electric heating industry [2].