一种降低芯片功耗的材料

Core Viewpoint - The research from the University of Minnesota Twin Cities presents a new material, Ni₄W, which can enhance the speed and energy efficiency of computer memory, addressing the growing demand for emerging memory technologies [4][5]. Group 1: Research Findings - The study published in the peer-reviewed journal "Advanced Materials" highlights the potential of Ni₄W, a combination of nickel and tungsten, to control magnetization in microelectronic devices [5]. - Ni₄W exhibits strong spin-orbit torque (SOT), a key mechanism for manipulating magnetism in next-generation storage and logic technologies, leading to reduced power consumption for data writing [5][6]. - The material allows for "field-free" switching of magnetic states, which can significantly lower the energy consumption of electronic devices such as smartphones and data centers [6]. Group 2: Material Characteristics - Ni₄W is made from common metals and can be manufactured using standard industrial processes, making it an attractive low-cost option for industry partners [7]. - The material demonstrates high spin current generation in multiple directions without the need for an external magnetic field, indicating its vast application potential in low-power, high-speed spintronic devices [6][7]. Group 3: Future Directions - The next step involves developing these materials into smaller devices than previously achieved, indicating ongoing advancements in the field [8]. - The research is supported by SMART, a leading research center focused on developing spin-based computing and storage technologies, and is part of a broader collaboration involving various experts and institutions [9].