北京大学发表最新Science论文

Core Viewpoint - The research presents a breakthrough in the growth of two-dimensional indium selenide (InSe) wafers, which are expected to surpass silicon-based electronic devices, addressing the challenges of achieving high-quality thin films for scalable applications [2][5]. Group 1: Research Methodology - The research team developed a solid-liquid-solid growth strategy that constructs an indium-rich liquid interface and strictly controls the 1:1 stoichiometry of indium selenide, successfully converting amorphous InSe films into high-crystallinity wafers [4]. - The resulting InSe wafers exhibit excellent uniformity, phase purity, and crystallinity over a diameter of approximately 5 centimeters [4]. Group 2: Performance Metrics - The transistors fabricated from the InSe wafers demonstrate superior electrical performance compared to existing two-dimensional thin-film devices, achieving an average mobility of 287 cm²/Vs at room temperature and a subthreshold swing as low as 67.3 mV/dec, nearing the Boltzmann limit [4]. Group 3: Implications for Industry - This research addresses the core challenges in the preparation of 2D InSe wafers, providing a high-performance material platform for integrated circuits in the post-silicon era, potentially advancing the development of next-generation low-power, high-performance computing and communication chips [5].