台媒：DRAM巨头，HBM有变

Core Viewpoint - Samsung Electronics has delayed the mass production of its next-generation High Bandwidth Memory (HBM) chips to 2026, indicating a more cautious approach in the ongoing redesign of DRAM technology [3][5]. Group 1: Samsung Electronics - Samsung initially planned to start mass production of the 12-inch HBM4 modules based on 10nm-class sixth-generation 1c DRAM in the second half of 2025, but now aims to deliver early samples to major customers in Q3 2025 and full-scale production in Q4 2025 [3][5]. - The company is focusing on improving the performance and yield of its redesigned 1c DRAM chips, with internal tests showing a yield of approximately 65% as of early July [3][5]. - Samsung is pursuing two strategies to enhance 1c DRAM: modifying previous 1a and 1b designs and completely redesigning to create a new generation of chips, which could increase chip size and yield but also raise costs [5]. Group 2: SK Hynix - SK Hynix reported record quarterly earnings, with operating profit increasing by 68% year-on-year to 9.21 trillion KRW (approximately 6.7 billion USD) and sales rising by 35% to 22.23 trillion KRW (approximately 16.1 billion USD) [7]. - HBM and AI-related memory products accounted for 77% of SK Hynix's total revenue, contributing to the strongest performance in its memory division to date [7]. - The company plans to double its HBM sales by 2025, driven by strong demand for its HBM3E chips, and is preparing for the commercial launch of HBM4 in 2026 after distributing early samples [8][9].