这项技术将助力氮化镓突破

Core Viewpoint - The integration of a unique electronic material with negative capacitance can help GaN transistors overcome performance limitations, potentially expanding its application beyond previous expectations [2][4]. Group 1: Negative Capacitance and GaN Transistors - Researchers from California have demonstrated that negative capacitance can help GaN transistors avoid the physical trade-offs typically required between "on" and "off" states [2]. - GaN-based electronic devices are crucial for powering 5G base stations and compact power adapters for mobile phones, facing challenges in achieving higher frequencies and power [2]. - The introduction of a dielectric layer in GaN devices can prevent energy waste when the device is off, but it also limits current flow when the device is on, affecting performance [3]. Group 2: HZO Material and Its Benefits - A special coating made of hafnium oxide and zirconium oxide, known as HZO, has been tested on GaN devices to replace traditional dielectrics [3]. - HZO is a ferroelectric material that maintains an internal electric field even without external voltage, which can enhance gate control and increase conduction current in transistors [4]. - The thickness of HZO can help suppress leakage current when the device is off, thus saving energy [4]. Group 3: Future Research and Industry Collaboration - The research team is seeking industry collaboration to test the negative capacitance effect in more advanced GaN RF transistors [6]. - The breakthrough observed in the lab needs to be validated in real-world applications to assess its effectiveness [6]. - The research indicates potential for advancing power electronics and telecommunications equipment towards higher power levels, with plans to explore this effect in other semiconductor materials [7].