三星DRAM，疯狂扩产

Core Viewpoint - Samsung Electronics is actively expanding its 1c (6th generation 10nm class) DRAM capacity to secure its leading position in the next-generation HBM (High Bandwidth Memory) market [2][3] Group 1: Investment Plans - Samsung plans to complete investments in its P4 1c DRAM facility in the Pyeongtaek complex by the first half of next year, including converting existing plants like P3 [2] - The final production line of the P4 facility is expected to begin investment early next year, with the P4 DRAM facility investment currently underway [2][3] - The remaining PH2 cleanroom is expected to start construction by the end of this year or early next year, which will likely also include a DRAM production line [2] Group 2: Production Capacity - Samsung's 1c DRAM capacity is projected to reach up to 60,000 wafers per month this year, with further expansion expected in the first half of next year [3] - The company is also converting the 17th line in Hwaseong for 1c DRAM production, indicating a strategic shift towards enhancing DRAM capacity [3] Group 3: Market Strategy - The company is focusing on ensuring production capacity for 1c DRAM to support the commercialization of HBM4, with plans to accelerate investments as yields and performance stabilize [3]