氮化镓和碳化硅，重磅宣布

Core Insights - Wolfspeed has officially commercialized its 200mm SiC material products, marking a significant milestone in the industry's transition from silicon to silicon carbide [2] - The 200mm SiC wafers and epitaxial layers are designed to enhance scalability and quality, supporting the development of next-generation high-performance power devices [2][3] - DB HiTek has completed the development of its next-generation power semiconductor process, the 650V E-Mode GaN HEMT, aimed at improving power efficiency in AI data centers and robotics [3][4] Wolfspeed Developments - The 200mm SiC wafers feature improved specifications, including a thickness of 350µm, and industry-leading doping and thickness uniformity, which enhance MOSFET yield and accelerate time-to-market [2] - The commercial launch of these products is driven by positive market feedback and the significant advantages they offer [2] - The company emphasizes that this advancement is not just about wafer size but represents a material innovation that enables customers to confidently accelerate their device roadmaps [3] DB HiTek Innovations - DB HiTek's new 650V GaN process is expected to significantly reduce power loss compared to silicon, making it a viable alternative for high-efficiency applications [4] - The company anticipates that the GaN process will synergize with its existing BCDMOS technology, which integrates analog, digital, and high-power circuits [4] - Market research predicts that the GaN market will grow at an annual rate of approximately 40%, increasing from $530 million in 2025 to $2.013 billion by 2029 [4] Capacity Expansion - To meet the growing demand for GaN technology, DB HiTek plans to expand its cleanroom capacity, increasing monthly wafer production from 154,000 to approximately 190,000 wafers, representing a 23% increase [4]