CIS，怎么走？

Core Insights - The development of image sensors has evolved over the past fifty years, focusing on increasing complexity in manufacturing processes to meet performance, yield, and cost requirements [1][3][5] - Stacking technology has enabled advancements from front-illuminated CCDs to back-illuminated CMOS, enhancing optical response and functionality [5][8] - The trend in interconnect spacing has stabilized post-2020, with TSMC being competitive at 1.4µm spacing, while optimal smartphone image sensor specifications are around 50 million pixels with a pixel pitch of 0.5µm to 0.7µm [10][12] - Innovations in pixel design, such as deep trench isolation and advanced capacitor types, are crucial for enhancing dynamic range and global shutter capabilities [17][20] - The emergence of short-wave infrared (SWIR) imaging requires innovative solutions due to silicon's limitations, highlighting the ongoing need for technological advancements in the industry [26] Group 1 - The trajectory of pixel development has shifted from merely reducing pixel size to adding more functionalities [17] - The use of novel materials and structures, such as AlO/ZrO layers, is essential for improving optical response and reducing dark signal generation [13][16] - The integration of multi-layer stacking with pixel-level interconnects presents opportunities for further advancements in image sensor technology [26] Group 2 - Enhanced image sensor processes have enabled non-photographic imaging applications, such as eye-tracking in augmented reality devices [25] - The first multi-spectral smartphone camera utilizes a 3x3 color filter array, demonstrating innovation in color correction without traditional filters [25] - The industry is no longer limited to a single dominant product, indicating a broad potential for development and innovation in image sensor technology [26]