原子级氟掺杂助力IGZO晶体管可靠性突破 —— VLSI 2024上的关键成果解读

Core Insights - The article discusses a significant technological breakthrough presented at the VLSI Symposium 2025, where atomic-level fluorine doping enhances the reliability of IGZO transistors at high temperatures, achieving a record low ΔVTH of less than 44 mV at 395K and 4MV/cm [1][3][12]. Industry Pain Points and Breakthrough Significance - IGZO transistors face challenges in reliability under high-temperature conditions, particularly due to PBTI effects, which lead to threshold voltage drift [3][4]. - The research team successfully addressed this issue through atomic-level fluorine doping, significantly improving high-temperature PBTI performance and opening new avenues for IGZO applications in complex system integrations [3][4]. Applications of IGZO Technology - IGZO is considered an ideal channel material for capacitor-less DRAM (1T-DRAM) due to its high on-state current and low off-state leakage [4]. - In "compute-in-memory" architectures, IGZO transistors are used for precise control of memristors [4]. - IGZO's low-temperature processability makes it a key option for post-CMOS logic layer stacking [4]. - The integration of IGZO with non-volatile devices like RRAM is suitable for neuromorphic computing and AI hardware chips, showcasing advantages in power consumption and density [4]. Performance Breakthroughs and Industrial Value - The fluorine doping process significantly enhances IGZO's reliability at high temperatures, with a record low ΔVTH of 43.7 mV achieved under high electric field strength and temperature conditions [9][12][15]. - The study highlights the strong dependence of threshold voltage drift on fluorine plasma power, with 250 W identified as the optimal doping power [12][15]. Mechanism Analysis - The introduction of fluorine atoms suppresses PBTI through several mechanisms: filling oxygen vacancies, forming stable bonds with metals, and significantly increasing the energy barrier for hydrogen migration [18][20]. - This research provides a novel atomic-scale understanding of how fluorine doping affects hydrogen ion migration, contributing to improved device reliability [18][20]. Team and Future Outlook - The work is led by a team from the National University of Singapore, with significant contributions from various researchers, indicating a strong collaborative effort in advancing IGZO technology for high-performance storage and computing applications [21].