这类芯片材料，前景光明

Core Viewpoint - Molybdenum is emerging as a promising alternative to traditional metals in semiconductor manufacturing, particularly at advanced nodes, due to its favorable properties and cost-effectiveness compared to ruthenium and other metals [2][3]. Group 1: Advantages of Molybdenum - Molybdenum has a higher resistivity than tungsten and does not require a barrier layer, making it more attractive for applications where barrier layers contribute to additional series resistance [3]. - A study demonstrated that a barrier-free molybdenum scheme can reduce total resistance by approximately 56% compared to traditional copper dual-damascene designs [3]. - Molybdenum's easier oxidation allows for simpler removal through chemical mechanical polishing (CMP) compared to ruthenium [3]. Group 2: Integration Challenges - The performance of molybdenum and other nanowires is highly dependent on the grain size and boundary structure of the deposited films, which are influenced by precursor materials and process parameters [4]. - Managing the migration interface and grain boundaries is crucial for reducing electron scattering and resistivity [5]. - Solid precursors like MoO2Cl2 and MoCl5 are increasingly common in semiconductor manufacturing, but they present challenges in thermal stability and material flux uniformity [5]. Group 3: Performance in Applications - Molybdenum shows promise in back-end power applications, where it maintains mechanical stability at high temperatures and has better adhesion to dielectrics, potentially reducing the risk of void formation [7]. - Early integration studies indicate that molybdenum's lower resistivity compared to tungsten allows for a 7.3% reduction in word line spacing and a 3.7% reduction in memory hole spacing, leading to a 16.3% increase in overall bit density [8]. - Molybdenum is well-suited for contact and word line applications, aligning well with existing integration schemes, although ruthenium may be more suitable for smaller devices in the long term [8].