2nm后的晶体管，20年前就预言了

Core Viewpoint - The article discusses the evolution and significance of Gate-All-Around (GAA) transistors, particularly in the context of semiconductor technology advancements, highlighting the transition from traditional FinFET designs to GAA structures as a means to enhance performance and energy efficiency in microchips [1][2]. Group 1: Historical Context and Development - The early research from Lawrence Berkeley National Laboratory nearly 20 years ago introduced innovative methods for creating advanced transistor structures, specifically the GAA-FET technology, which is crucial for packing billions of transistors into microchips [2][4]. - Peidong Yang, a key figure in this research, emphasized the potential of GAA structures to improve transistor performance and reduce power consumption, marking a significant architectural advancement in semiconductor technology [4][5]. Group 2: Technical Advancements - GAA structures allow for more precise control of current flow compared to traditional FinFET designs, which face efficiency challenges when scaled down below 5 nanometers [5][6]. - The GAA method, which fully wraps the gate around the channel, is seen as a natural progression for advanced solid-state nanoelectronic devices, although traditional top-down lithography techniques have struggled to achieve the necessary geometries [11][12]. Group 3: Performance Metrics - The article highlights that the GAA transistors exhibit superior electrostatic control, with a reduction of short-channel effects by 35% compared to FinFETs, making them more efficient at smaller scales [13][19]. - The performance parameters of the developed Si VINFET devices, such as transconductance and mobility, are comparable to those of standard planar MOSFETs, indicating their competitive potential in the market [25][19]. Group 4: Future Prospects - The integration of vertically grown silicon nanowires in GAA structures presents a promising avenue for achieving high transistor density and performance, with the potential to compete with existing advanced solid-state devices as manufacturing techniques improve [25][24]. - The article concludes that with further optimization in processes and device structures, these GAA transistors could effectively operate at scales below 10 nanometers, continuing the trend of miniaturization in semiconductor technology [25].