中国SiC，卷赢了？

Core Viewpoint - Silicon Carbide (SiC) is gaining attention as the next-generation power semiconductor material due to its superior properties compared to silicon (Si), particularly in high-temperature and high-pressure applications [1][3]. Group 1: Historical Progress and Development - Significant advancements in SiC power devices have been made since the 2000s, overcoming early challenges related to defects in the crystal structure [3][4]. - The defect density in SiC wafers has been reduced by an order of magnitude, thanks to improved simulation technologies and experimental efforts [3][4]. - The price of SiC wafers has dramatically decreased over the past 20 years, with 8-inch wafers now costing around 4,800 RMB, a reduction of nearly an order of magnitude [4]. Group 2: Market Expansion and Key Players - The year 2001 marked a turning point for SiC with Infineon Technologies leading the small-scale production of SiC diodes, although the market was limited at that time [6]. - The introduction of SiC transistors by Cree (now Wolfspeed) and ROHM in 2010 was a significant milestone, but the market size remained minimal [6]. - Tesla's adoption of SiC power devices in its electric vehicles in 2018 catalyzed market expansion, leading to increased awareness and adoption of SiC technology in the automotive sector [6][7]. Group 3: Current Market Trends and Future Outlook - The SiC market is expected to reach approximately 30 billion RMB by 2024, driven by the growing demand for electric vehicles and advancements in railway vehicle applications [7]. - China has emerged as a leader in SiC wafer production, surpassing Japan, the US, and Germany in wafer size, quality, and cost reduction [9]. - Despite China's rapid development in SiC, Japanese companies still lead in advanced device development, maintaining a competitive edge in the power device ecosystem [9][10]. Group 4: Challenges and Technical Issues - A persistent issue for SiC is the high defect density at the SiC and SiO2 interface, which hinders its full potential [15][16]. - The resistance of SiC is currently two to three times higher than ideal values, indicating a need for breakthroughs in research to improve performance and reduce costs [15][16]. - Reliability concerns are becoming increasingly important as SiC power devices gain popularity, necessitating the design of protective circuits to prevent damage during overload conditions [15][16].