12英寸氮化镓，巨头宣布

Core Insights - imec has launched a 300mm GaN program aimed at developing power devices, with initial partners including AIXTRON, GlobalFoundries, KLA Corporation, Synopsys, and Veeco [1][4] - The project focuses on low and high voltage power electronics applications, specifically targeting the development of 300mm GaN epitaxial growth technology and HEMT process flows [1][3] Group 1: Project Overview - The 300mm GaN initiative is part of imec's GaN Power Electronics Industrial Alliance Program (IIAP), which aims to reduce manufacturing costs and enhance the development of advanced power electronic devices [1][2] - The transition to 300mm substrates is expected to facilitate the creation of more efficient low-voltage load point converters for CPUs and GPUs [3][4] Group 2: Market Potential - GaN-based fast chargers have recently entered the market, showcasing the technology's potential in power electronics applications [2] - Compared to silicon-based solutions, GaN products are anticipated to offer smaller form factors, lighter weights, and superior energy conversion efficiencies [2] Group 3: Technical Development - imec plans to establish a benchmark technology platform for lateral p-GaN HEMTs using 300mm silicon substrates for low voltage applications (100 volts and above) [3] - The project will also address high voltage applications (650 volts and above) using 300mm semi-spec substrates and CMOS-compatible QST engineering substrates [3] Group 4: Ecosystem Collaboration - Successful development of 300mm GaN technology relies on building a robust ecosystem that fosters collaboration across design, epitaxy, process integration, and application [4] - imec emphasizes the importance of tight cooperation among partners to drive innovation across the entire value chain of GaN power electronics [4]