三星内存，重大升级

Core Viewpoint - Samsung Electronics aims to achieve a bandwidth exceeding 3 TB/s for its upcoming HBM4E memory, set for mass production in 2027, marking a significant advancement in high-bandwidth memory technology [1][3]. Group 1: HBM4E Development - Samsung has set a target pin speed of over 13 Gbps for HBM4E, which translates to a total bandwidth of 3.25 TB/s, 2.5 times that of the current HBM3E [1][3]. - The company has increased the HBM4E bandwidth target by 25% compared to last year's plan, which was initially set at 2.5 TB/s with a pin speed of 10 Gbps [2][3]. - The energy efficiency of HBM4E is expected to be more than double that of HBM3E, which currently operates at 3.9 pJ per bit [1]. Group 2: Competitive Landscape - The semiconductor industry anticipates that the bandwidth for the next-generation HBM4E will exceed initial expectations, with Samsung being the first among memory manufacturers to propose a target bandwidth above 3 TB/s [3]. - Nvidia, a major customer, has requested increased bandwidth for its next-generation AI accelerator, prompting Samsung to enhance its HBM4 specifications [2][3]. Group 3: Other Developments - Samsung introduced its first LPDDR6 product, targeting a pin speed of 10.7 Gbps and a total bandwidth of 114.1 GB/s, with a 20% improvement in energy efficiency over LPDDR5X [3]. - The company is progressing towards the completion of its 2 nm process technology, with plans for mass production by the end of the year [4]. - Samsung is collaborating with the Korean AI chip startup Rebellions on the development of the REBEL-CPU, which aims for a target operating frequency of 3.5-4.0 GHz [4].