存储巨头，想用FinFET做闪存

Core Viewpoint - Samsung Electronics plans to introduce FinFET technology in NAND flash memory, aiming to develop high-performance NAND suitable for AI chipsets, although practical application is expected to take time [1][2]. Group 1: Technology Innovation - FinFET is a key innovation for achieving the required performance and power levels on limited transistor stacking areas [1]. - FinFET technology, characterized by its three-dimensional structure, overcomes the limitations of traditional planar structures, enhancing performance and efficiency [1][2]. - The introduction of FinFET in NAND flash memory is expected to significantly increase integration density, leading to faster signal transmission, lower power consumption, and smaller chip sizes [2]. Group 2: Industry Collaboration - The semiconductor industry must deepen collaboration to reduce unnecessary resource consumption related to diverse semiconductor technologies [2]. - The complexity of technology development has increased, requiring collaboration among more departments than before to achieve innovation [2].