好消息！国产光刻胶重磅突破！攻克5nm芯片制造关键难题

Core Insights - A significant breakthrough has been achieved in China's semiconductor materials sector, specifically in photoresist technology, which is crucial for chip manufacturing [1] - The research team led by Professor Peng Hailin from Peking University has successfully utilized cryo-electron tomography to analyze the three-dimensional structure and entanglement behavior of photoresist molecules in a liquid environment, leading to a solution that significantly reduces lithography defects [1] Global Photoresist Industry Landscape - The global photoresist market is highly concentrated, with Japanese companies dominating, especially in the high-end semiconductor sector, controlling over 90% of the market share [2] - The global photoresist market is projected to reach approximately $4.96 billion in 2024 and $6.7 billion by 2030, with a compound annual growth rate (CAGR) of 5.24% from 2025 to 2030 [2] - Major international players include JSR, TOK, Sumitomo Chemical, Shin-Etsu Chemical, Fujifilm, and Dow Chemical, with Japanese firms holding over 75% of the market share and 96.7% in the high-end segment [2] Value Perspective - Although photoresist accounts for only 5% of the chip material cost, its performance directly impacts chip yield, with a 1% yield fluctuation potentially resulting in losses of tens of millions of dollars [3] Breakthrough in Domestic Photoresist - Photoresist is a critical material in chip manufacturing, affecting the precise transfer of circuit patterns and overall chip yield [4] - The research team observed significant entanglement behavior among photoresist polymers, leading to the formation of agglomerated particles that cause defects during the development process [5] - The team successfully eliminated over 99% of pattern defects caused by photoresist residues on 12-inch wafers, providing crucial technical support for the manufacturing of chips at the 5nm process node and below [6] Molecular-Level Defects - Traditional characterization methods could only observe the final pattern, failing to trace the molecular entanglement state during the liquid exposure moment, leading to defects such as random bridging and excessive line edge roughness (LER) [8] - The entanglement behavior was precisely understood, allowing the development of a new molecular control scheme that significantly reduced abnormal entanglement probability [9] Implications of the Research - The research provides a powerful tool for observing various liquid-phase interface reactions at the atomic/molecular scale, which will enhance defect control and yield improvement in critical processes such as lithography, etching, and wet cleaning [10]