Core Viewpoint - Hanmi Semiconductor plans to launch a dedicated "wide temperature bonding machine" for the next-generation high bandwidth memory (HBM) market by the end of 2026, marking a proactive shift towards wide temperature HBM technology [2][3] Group 1: Product Development - The wide temperature bonding machine will be used in the production of next-generation HBM chips, particularly for AI semiconductors, by precisely applying temperature and pressure to bond vertically stacked DRAM chips [2][3] - The industry is facing challenges with high stacking methods exceeding 20 layers of DRAM, leading to a shift towards wide HBM, which expands chip area horizontally instead of vertically [2][3] Group 2: Technological Advancements - Increasing the area of HBM chips allows for a stable increase in the number of through-silicon vias (TSV) and input/output (I/O) interfaces, improving memory capacity, bandwidth, thermal management, and power efficiency [3] - The new bonding machine features a no flux bonding capability, reducing surface oxidation without the need for cleaning processes, thus simplifying the workflow and enhancing bonding strength while reducing HBM thickness [3] Group 3: Market Position and Strategy - Hanmi Semiconductor, established in 1980, is a leading global semiconductor equipment company with approximately 320 clients and holds a dominant position in the TC bonding machine market for HBM production [3] - The introduction of the wide temperature bonding machine is expected to delay the launch of hybrid bonding machines initially planned for next-generation HBM high stacking production, enhancing customer competitiveness in HBM production [3]
一款面向HBM 5的键合机
半导体芯闻·2025-11-04 09:48