Group 1 - Samsung Electronics has established a new organization within its Device Solutions (DS) division to oversee the overall development of storage semiconductors, including DRAM and NAND flash [1] - The new "Memory Semiconductor Development Division" aims to enhance the storage semiconductor solutions and packaging capabilities by integrating operations, with the DRAM development team leader, Hwang Sang-jun, appointed to lead this organization [1] - The high bandwidth memory (HBM) development team will be incorporated into the design team under the DRAM development team, following a previous organizational adjustment aimed at improving technical competitiveness after being surpassed by SK Hynix in the HBM market [1] Group 2 - The reassignment of HBM personnel back to the memory development department reflects the company's confidence in its technological strength for next-generation products like HBM4 [2] - Samsung Electronics has also established a Digital Twin Center under its Global Manufacturing Infrastructure division, which is interpreted as a preparation for building an "AI factory" for semiconductors [2] - The company plans to apply artificial intelligence to semiconductor design and processes, incorporating 50,000 GPUs provided by NVIDIA [2]
三星存储,成立新部门
半导体芯闻·2025-11-28 10:46