场效应管：100周年

Core Viewpoint - The article discusses the significance of the 100th anniversary of the Field Effect Transistor (FET) in 2025, highlighting its historical development and future prospects as presented by Professor Iwai Hiroshi at the International Electron Devices Meeting (IEDM) [1][4]. Group 1: Historical Development of FET - The timeline from 1925 to 2025 is divided into two periods: the first 45 years as a "progressive period" and the latter 55 years as a "success story period," marked by significant predictions such as the "Scaling Law" and "Moore's Law" [4]. - The FET concept originated in 1925 with Julius Edgar Lilienfeld, who patented the principles of the FET [5]. - The first practical transistor was developed in December 1947 at Bell Labs, known as the "point-contact transistor," which utilized a different working principle than the FET [13]. Group 2: Technical Advancements - The first FET, the Metal-Semiconductor FET (MES FET), was invented in 1925, followed by the Metal-Oxide-Semiconductor FET (MOS FET) in 1928, which introduced an aluminum oxide insulating layer [7][8]. - The development of the pn junction by Russell Shoemaker Ohl at Bell Labs in the late 1930s was crucial for the advancement of bipolar junction transistors (BJTs) and subsequently for MOS FETs [18][21]. - The invention of the MOS FET in 1959 by Dawon Kahng and Martin Atala marked a significant milestone, although it initially faced stability issues and was not ready for industrial production [29][32]. Group 3: Future Prospects - Professor Iwai's lecture at the IEDM aims to reflect on the journey of FETs and their potential future developments, emphasizing the importance of continued innovation in semiconductor technology [1][4].