Core Viewpoint - The third-generation semiconductor materials (such as SiC and GaN) require heterogeneous integration and advanced packaging to continue Moore's Law, with the challenge of high-temperature bonding processes being a significant barrier to technological breakthroughs [1] Group 1: Technology Analysis - The core of the technology is achieving high-strength and high-cleanliness bonding between wafers at room temperature, which involves two key steps: 1. Surface activation in an ultra-high vacuum environment to remove natural oxide layers and contaminants, creating ideal conditions for bonding [3] 2. Precise alignment and bonding of activated wafers at room temperature, allowing for atomic-level bonding without heating [4] Group 2: Technical Advantages - The technology eliminates thermal damage by maintaining a room temperature process, thus removing thermal stress on sensitive structures and heterogeneous materials [6] - It achieves ultra-high interface quality with bonding strength exceeding 2 J/m² due to the ultra-high vacuum activation process [6] Group 3: Application Evidence - The room temperature bonding technology has successfully addressed long-standing engineering challenges in various cutting-edge fields, including: 1. Overcoming the industrialization bottleneck of GeOI substrates, optimizing both heat dissipation and cost [10] 2. Enabling the integration of SiC-based lithium niobate films, facilitating the transition of SAW filters into the 5G high-frequency era [10] Group 4: Industry Significance - The maturity and equipmentization of room temperature bonding technology are being validated in advanced research and production lines, indicating its potential as a reusable platform solution for heterogeneous integration across various material systems [14] - This technology is expected to expand the performance boundaries of semiconductor devices in power, RF, sensing, and photonics applications, with strategic value increasing as the demand for heterogeneous integration and system-level packaging grows [14]
常温键合,成破局关键
半导体行业观察·2025-12-29 01:53