重磅突破！西电拿下世界级半导体材料“卡脖子”难题

Core Viewpoint - The research team from Xi'an University of Electronic Science and Technology has broken a 20-year bottleneck in semiconductor material technology, significantly improving chip heat dissipation efficiency and overall performance, providing a replicable Chinese model for high-quality integration of various semiconductor materials [1][3]. Group 1: Breakthrough in Semiconductor Technology - The team innovatively injected high-energy ions into the crystal nucleation layer of third-generation semiconductor chips, smoothing the previously uneven surface, which reduced thermal resistance to one-third of its original value, addressing common heat dissipation challenges faced by current and future semiconductor chips [3][5]. - The breakthrough has led to a significant performance enhancement in semiconductor devices, with the newly developed gallium nitride microwave power devices showing a performance increase of 30% to 40% compared to the most advanced similar devices on the market [5]. Group 2: Implications for Applications - The improved semiconductor technology will enhance detection equipment's range and enable communication base stations to achieve greater signal coverage with lower energy consumption [5]. - For the general public, the benefits of this technology will gradually become apparent, such as improved signal reception capabilities in remote areas and potentially longer battery life for mobile devices [5].