中科院AI芯片新路径登Science！铁电材料新结构突破存储密度极限

Core Viewpoint - The research from the Institute of Physics, Chinese Academy of Sciences, reveals a significant breakthrough in ferroelectric materials, specifically in the atomic-level "one-dimensional charged domain walls" within zirconia, laying a new physical foundation for next-generation artificial intelligence devices [1][4]. Group 1: Breakthrough in Ferroelectric Materials - The research team confirmed that the width and thickness of these domain walls are only the size of a single crystal cell, confined within a two-dimensional polar layer, achieving the physical limit of size [3][10]. - This discovery unveils the charge screening mechanism of oxygen ions' "self-balancing," breaking through the traditional storage density bottleneck of two-dimensional domain walls [3][22]. - The unique "polarization-ion" coupling transport characteristics of this one-dimensional structure open new physical pathways for constructing high-energy-efficient brain-like computing chips and AI devices [4][24]. Group 2: Characteristics of Ferroelectric Materials - Ferroelectric materials are defined as a class of crystalline materials with spontaneous polarization, where the polarization direction can be reversed by an external electric field [6]. - These materials can be visualized as filled with tiny "electrical compasses" that indicate the direction of charge separation rather than geographical north and south [6][7]. - The concept of ferroelectric domains is introduced, where these "compasses" align in groups to minimize energy, forming domain walls that separate different polarization regions [8][9]. Group 3: Unique Structure of Domain Walls - The research team discovered that in zirconia, the originally broad two-dimensional "walls" are compressed into atomic-scale one-dimensional "lines" due to the material's unique sub-cell layered structure [11][12]. - These one-dimensional structures are not ordinary "walls" but special charged domain walls, categorized as "head-to-head" and "tail-to-tail" [12][13]. - The stability of these high-energy structures, which are typically unstable, is maintained through the introduction of high concentrations of point defects acting as "charge glue" [29][30]. Group 4: Implications for Data Storage and Ion Transport - The theoretical data storage density using these atomic-level one-dimensional domain walls can reach 20TB per square centimeter, equivalent to storing 10,000 HD movies on a device the size of a postage stamp [24]. - The material exhibits superior ionic conductivity at room temperature, outperforming traditional solid electrolytes like yttria-stabilized zirconia (YSZ), transforming it into a "highway" for ion transport [22][23]. - The research highlights a precise "charge compensation mechanism" that allows the one-dimensional domain walls to exist stably while facilitating efficient ionic conduction [36].