混合键合，集体延期了

Core Viewpoint - Samsung Electronics and SK Hynix have announced the mass production of the sixth generation High Bandwidth Memory (HBM4), but they have postponed the introduction of hybrid bonding machines, which were initially expected to be partially used in HBM4 production [1][2] Group 1: Production and Technology - Samsung and SK Hynix plan to use existing TC bonding machines from companies like Semes and Hanmi Semiconductor for HBM4 mass production, even for the initially expected 16-layer HBM4 products [1] - The companies will continue to use the micro bump DRAM stacking method by adjusting the stacking height of HBM4, which involves reducing the bump pitch [1][2] - Hybrid bonding technology, considered a disruptive technology for the next generation of HBM, is still under research and testing, with large-scale production expected to take time [1][2] Group 2: Performance and Market Dynamics - The number of channels in HBM4 has doubled compared to the previous generation, and the interface width has increased, leading to enhanced signal transmission speeds per pin [2] - The design goal for HBM4 is to reduce the micro bump pitch to approximately 10 micrometers (µm), which is still expected to meet performance targets [2] - Current TC bonding machines can meet the standards set by the International Semiconductor Standards Organization (JEDEC), while hybrid bonding machines and no-flux bonding machines are more expensive and have lower yields [2] Group 3: Future Outlook - Samsung has sent samples of HBM4 using hybrid bonding technology to customers and expects gradual commercialization of HBM4E, the next generation [2] - Despite the potential of hybrid bonding technology for high-end product lines, TC bonding machines will continue to play a core role in mainstream HBM4E products due to stability and cost-effectiveness [2]