半导体所在大规模单片集成高速光互连研究方面取得新进展

Core Insights - The article discusses significant advancements in silicon-based photonic integration technology, which is crucial for meeting the increasing demand for high-performance interconnect capabilities in the context of exponential data growth driven by AI, IoT, and big data [1] Group 1: Technological Advancements - Silicon photonic integration is identified as a revolutionary technology that merges light and electricity, enabling high bandwidth, low latency, high energy efficiency, and lightweight interconnect solutions [1] - Recent research by a team led by researchers Yang Tao and Yang Xiaoguang has made progress in large-scale monolithic integration of high-speed optical interconnects using a silicon-based epitaxial quantum dot platform [2] Group 2: Research Findings - The research results were published in "Laser & Photonics Reviews," highlighting the development of a wafer with an 8-layer InAs/GaAs quantum dot structure on a CMOS-compatible silicon substrate [2] - The team successfully fabricated direct modulation lasers and waveguide photodetectors, achieving a maximum 3-dB bandwidth of 4.5 GHz for lasers and 2.02 GHz for detectors [1][2] Group 3: Performance Metrics - The direct modulation rate of the laser reached 12.5 Gbit/s, while the data reception capability of the detector was 5 Gbit/s [1] - High-speed signal interconnects were demonstrated with a rate of 1.01 GHz based on a free-space optical coupling integrated structure [1]