氧化镓，爆发前夜

Core Viewpoint - Novel Crystal Technology (NCT) has begun delivering 150mm (6-inch) β-Ga₂O₃ wafer samples, marking a significant step towards the mass production of gallium oxide as a next-generation power semiconductor material [2][9] Group 1: Industry Development - Gallium oxide (Ga₂O₃) is recognized as the fourth generation of wide bandgap semiconductor materials, following silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) [3] - The bandgap of gallium oxide is 4.9 eV, significantly higher than that of silicon (1.1 eV), silicon carbide (3.2 eV), and gallium nitride (3.39 eV), making it suitable for high-power electronic applications [3][4] - Gallium oxide exhibits a theoretical breakdown field strength of up to 8 MV/cm, more than double that of silicon carbide and gallium nitride, allowing for smaller device sizes and higher power density [6] Group 2: NCT's Technological Advancements - NCT has developed a method to produce 150mm β-Ga₂O₃ wafers using the EFG method, which allows for faster crystal growth and higher production efficiency [9] - The company plans to deliver 150mm β-Ga₂O₃ epitaxial wafer samples by 2027, achieve full-scale production by 2029, and develop 200mm (8-inch) wafers by 2035 [2][11] - NCT's recent advancements include the development of a new crystal growth technique, Drop-fed Growth (DG), which significantly reduces manufacturing costs [11] Group 3: Global Competition - The global gallium oxide industry is intensifying, with companies and research institutions from Japan, the USA, Germany, the UK, South Korea, and China actively participating [12][22] - Japan's FLOSFIA is focusing on α-Ga₂O₃ technology, achieving breakthroughs in key device structures [13] - In the USA, Gallox is leading the commercialization of gallium oxide devices, targeting high-power applications in data centers and electric vehicles [16] Group 4: China's Position in the Market - Chinese companies are making significant strides in gallium oxide, achieving breakthroughs in large-size crystal growth and establishing a comprehensive industry chain [23][24] - Hangzhou Gaoren Semiconductor has successfully produced the world's first 8-inch gallium oxide single crystal, setting a global record [24] - Chinese firms are also advancing in equipment development, with significant innovations in crystal growth technology [26] Group 5: Future Prospects - With the delivery of 6-inch wafers and the implementation of low-cost DG methods, gallium oxide is expected to revolutionize applications in electric vehicles, fast charging stations, and aerospace [12][46] - The ongoing global investment and collaboration in gallium oxide technology are paving the way for its engineering applications, contributing to the advancement of fourth-generation semiconductor technologies [46]