半导体行业观察·2026-03-14 01:08Core Viewpoint - The future development of advanced lithography technology is a key topic at the SPIE Advanced Lithography and Patterning Conference in 2026, with a consensus that existing technologies will not meet future demands in ten years. The focus is on increasing numerical aperture (NA) while shortening wavelength [2]. Group 1: Current Technology and Developments - The most advanced technology, Extreme Ultraviolet Lithography (EUV), uses a wavelength of 13.5 nanometers to create features as small as 8 nanometers. The resolution is proportional to the wavelength divided by the numerical aperture [3]. - ASML's latest equipment has a numerical aperture of 0.55, known as high NA EUV. Upcoming devices are being developed with a numerical aperture of 0.75, which could reduce the minimum printable size by 36% to approximately 5 nanometers [3]. - The transition to higher numerical aperture, referred to as hyper NA, is expected to occur, with ASML advancing this technology. Optical manufacturer Zeiss is designing a lens component slightly larger than those used in current high NA tools [3]. Group 2: Challenges and Solutions - A significant challenge in North America is the increased chip size leading to reduced depth of focus, which can blur images on chips, affecting performance and yield. Solutions involve improving focus control through enhancements in sensors and scanners or using flatter wafers [3]. - The need for ultra-high throughput nucleic acid testing technology is anticipated to be resolved, ensuring availability when required [4]. - IBM's roadmap discusses an alternative approach focusing on a next wavelength of 3.1 nanometers, which could provide advantages such as a smaller numerical aperture for achieving specific resolutions, resulting in greater depth of focus compared to longer wavelengths [4]. Group 3: Technical Considerations - The new wavelength can adjust optical designs and improve other aspects, potentially reducing line edge roughness by 20%, which is crucial for aligning patterns on wafers [7]. - Minimizing edge placement error is a key factor in determining wavelength, and reducing this error while shrinking feature sizes is a primary goal of IBM's lithography technology roadmap for the next 15 years [7]. - There are significant challenges remaining in perfecting lithography infrastructure, including the low reflectivity (35% to 40%) of mirrors capable of reflecting 3.1 nanometer light, which could lead to substantial light loss in lithography equipment [7][8].