中国高校携手，单片异质集成芯片与重构技术

Core Viewpoint - The article discusses the advancements in GaN/Si CMOS heterogeneous integration technology, emphasizing its potential to meet the increasing multifunctional demands of integrated circuits driven by AI and machine learning applications. The collaboration between Fudan University and Jiangnan University focuses on overcoming challenges in material integration and process design to enhance chip performance and efficiency [2][4][29]. Group 1: Heterogeneous Integration Process and Collaborative Design - The research optimizes a 6-inch GaN/CMOS IC heterogeneous integration scheme based on a 3 μm 20 V process, achieving a breakthrough in the integration of analog devices with GaN materials [8]. - A complete SPICE model for the heterogeneous integration system was constructed, demonstrating higher integration density and smaller form factor compared to traditional all-GaN or all-Si technologies [9]. - The integration platform is divided into three functional modules: silicon process module, interface process module, and GaN process and integration module, with the silicon module being the most challenging [9]. Group 2: Device Characterization and Performance - The electrical performance of the fabricated devices was characterized, showing NMOS transistors with threshold voltages ranging from 1.6 V to 2.5 V, indicating successful optimization for analog circuit applications [13]. - The GaN HEMT device demonstrated a maximum drain current of 300 mA/mm, showcasing a high current density approximately 40 times that of similar silicon-based devices, with a low on-resistance of 9.675 mΩ・cm² [15]. - The developed DC-DC buck converter based on the GaN/Si CMOS integration platform achieved a total power loss reduction from 752.68 mW in all-GaN solutions to 183.41 mW, highlighting the efficiency of the integrated design [27][28]. Group 3: Modeling and Parameter Extraction - A high-precision SPICE model was constructed for the GaN/Si CMOS heterogeneous integration system, utilizing the advanced ASM-HEMT model tailored for GaN HEMT devices [19]. - The model extraction process involved detailed parameter fitting, achieving a root mean square error of only 2.68%, indicating a strong match between simulated and measured electrical characteristics [22]. Group 4: Conclusion and Future Prospects - The established GaN/Si CMOS heterogeneous integration platform effectively combines silicon-based CMOS control logic, silicon-based rectifiers, and GaN switching devices, overcoming the limitations of both all-GaN and all-Si solutions [29]. - The integration of materials and processes within the GaN/Si CMOS technology demonstrates significant potential for high-performance power electronic systems in AI applications, indicating a promising future for this technology [29].