三星大举进军GaN

Core Insights - Samsung Electronics plans to operate an 8-inch (200mm) GaN power semiconductor foundry line, expected to achieve full-scale production by Q2 2024, marking its official entry into the GaN wafer foundry business after over three years of announcements [1] - The company has secured one customer but anticipates revenues from the GaN foundry business to be below 1 trillion KRW due to a limited customer base [1] - Samsung aims to enhance profitability by offering a full suite of services without chip design and producing wafers in-house rather than sourcing them externally [1] Summary by Sections GaN Semiconductor Market - GaN devices are typically used in applications below 1200 volts, such as electric vehicle charging stations and smartphone chargers, and are critical for improving power conversion efficiency in AI data centers [2] - Nvidia promotes an 800V DC power architecture that requires high-voltage DC to be converted to lower voltages internally, where GaN-based converters are widely utilized [2] - GaN offers advantages in high-voltage operation and fast switching, leading to higher power density, lower heat generation, and more compact system designs [2] Samsung's Production Plans - Samsung previously announced plans to start power semiconductor foundry operations in 2025, but this timeline has been delayed [2] - Foundry companies typically secure customers before filling capacity, and Samsung's decision to advance its plans appears to be based on customer development over the past year [2] - The company also plans to launch a SiC power semiconductor foundry line this year, offering a full suite of services from design to packaging, with a voltage range of 1200 to 1700 volts [2] - Samsung has not confirmed specific details regarding the operation of the GaN power semiconductor foundry [2]