Core Insights - The research team at the Ningbo Institute of Materials Technology and Engineering has made a significant breakthrough in the field of next-generation spintronic devices, transforming obstacles to electron movement into performance enhancers, providing a new approach to overcoming the core bottleneck faced by spintronic devices [1][3] Group 1: Spintronic Devices - Spintronic devices theoretically possess advantages such as high speed and non-volatility, but face challenges related to high write current and power consumption, hindering large-scale application [1][2] - The "power wall" has become a critical bottleneck for industry development, as traditional electronic technologies approach their performance limits due to increased power consumption and heat generation from densely integrated components [1] Group 2: New Physical Principles - The research team discovered a new physical law, termed "non-traditional scaling law," indicating that crystal defects, previously seen as obstacles, can enhance the performance of devices by strengthening the orbital effect when interacting with the orbital flow of electrons [3] - This finding provides a new physical basis for developing efficient orbital electronic devices and offers fresh design ideas for the field of spintronics [3]