Core Insights - Navitas Semiconductor is advancing its development of 800 VDC GaN and SiC power devices to support NVIDIA's next-generation AI factory computing platforms [1][4][13] Industry Overview - The emergence of AI factories necessitates a shift from traditional 54V power distribution to 800 VDC to meet the high power density requirements of modern computing platforms [2][4] - The 800 VDC architecture allows for direct conversion from 13.8 kVAC utility power to 800 VDC, enhancing energy efficiency and system reliability by reducing conversion stages [3][4] Company Developments - Navitas is introducing a new 100V GaN FET portfolio designed for high efficiency and thermal performance, optimized for GPU power boards [7][8] - The company’s 650V GaN portfolio includes high-power GaN FETs and GaNSafe™ power ICs, which provide integrated control and protection features [10][11] - GeneSiC™ technology offers a broad voltage range from 650 V to 6,500 V, supporting high-reliability applications in energy storage and grid-tied projects [12] Strategic Partnerships - Navitas has formed a strategic partnership with Power Chip to enable scalable, high-volume manufacturing of its 100V GaN FETs [8] Market Position - Navitas Semiconductor is positioned as a leader in next-generation power semiconductors, focusing on GaN and SiC technologies to drive innovation across various sectors, including AI and data centers [15]