TORRANCE, Calif., Oct. 13, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, announced progress in its development of advanced medium and high 800 VDC voltage GaN and SiC power devices to enable the 800 VDC power architecture announced by NVIDIA for next-generation AI factory computing platforms. With the emergence of the ‘AI factory’, a new class of data center purpose ...