Core Insights - Navitas Semiconductor has introduced new 100 V GaN FETs, along with 650 V GaN and high voltage SiC devices, specifically designed for NVIDIA's 800 VDC AI factory architecture, achieving significant improvements in efficiency, power density, and performance [1][22]. Group 1: Product Development - The new 100 V GaN FETs are optimized for lower-voltage DC-DC stages on GPU power boards, focusing on ultra-high density and thermal management essential for next-generation AI compute platforms [8]. - The 650 V GaN portfolio includes high-power GaN FETs and advanced GaNSafe™ power ICs, which integrate various control and protection features to ensure robustness and reliability for AI infrastructure [10]. - GeneSiC™ technology offers a broad voltage range from 650 V to 6,500 V, demonstrating exceptional performance in high-power applications, including energy storage and grid-tied inverter projects [12]. Group 2: Industry Context - The emergence of AI factories necessitates a shift from traditional 54V power distribution to 800 VDC systems to meet the high power density requirements of modern computing platforms [3][5]. - The 800 VDC architecture allows for direct conversion from 13.8 kVAC utility power to 800 VDC, enhancing energy efficiency and system reliability by reducing conversion stages [4]. - The transition to 800 VDC is described as transformational, addressing the critical need for efficient, scalable, and reliable power delivery in next-generation data centers [13]. Group 3: Strategic Partnerships and Manufacturing - Navitas has established a strategic partnership with Power Chip to fabricate the new 100 V GaN FETs on a 200mm GaN-on-Si process, enabling scalable and high-volume manufacturing [9]. - The company emphasizes its commitment to innovation in wide bandgap technologies, with over 300 patents issued or pending, positioning itself as a leader in the semiconductor industry [18].