Core Viewpoint - Applied Optoelectronics Inc. has introduced a new 400-milliwatt narrow-linewidth pump laser aimed at meeting the increasing demand for silicon photonics and co-packaged optics in AI data centers [1][2]. Product Development - The 400mW laser has been in development for several years and is designed to enhance performance where broader linewidth or higher noise figures limit existing lasers [2]. - This laser can directly source into semiconductor chip-scale systems, providing a high-performance light source for hyperscalers in applications requiring precision and power from a stable wavelength [2]. Key Benefits and Specifications - The new laser technology is expected to support sophisticated optical network architectures, raising standards for laser power, coherence, and stability [3]. - It aims to unlock scalable optical I/O, simplify system design, and facilitate the transition to co-packaged optics at 800G and beyond [3]. - The laser delivers over 400mW of optical power at 50°C, with a narrow linewidth, and is built on AOI's mature buried hetero (BH) structure laser platform, ensuring excellent reliability [8]. Market Impact - The introduction of this laser is anticipated to close 800G / 1.6T power budgets by providing sufficient optical power to overcome losses without exceeding thermal limits near AI switch ASICs [8]. - It enables shared and external laser architectures, allowing multiple silicon photonics lanes or wavelengths to be fed from a single centralized source [8]. - The technology stabilizes silicon photonics devices by minimizing wavelength drift and noise, improving system yield and uptime by reducing calibration efforts [8]. Production Timeline - Samples of the new laser are currently available to select customers, with volume production expected to commence later in 2026 [3].