Core Viewpoint - ROHM Semiconductor has developed the BM6GD11BFJ-LB, an isolated gate driver IC designed for 600V-class high-voltage GaN HEMTs, enhancing efficiency and miniaturization in high-current applications like motors and server power supplies [1][4]. Group 1: Product Development - The BM6GD11BFJ-LB is the first in a series of isolated gate driver solutions optimized for GaN devices, leveraging ROHM's expertise in isolated gate driver ICs for silicon and SiC devices [3]. - The driver utilizes proprietary on-chip isolation technology to minimize parasitic capacitance, enabling high-frequency operation up to 2MHz, which maximizes the switching capabilities of GaN devices [4]. - The device features a gate drive voltage range of 4.5V to 6.0V and an isolation voltage of 2500Vrms, supporting a wide range of high-voltage GaN devices, including ROHM's 650V EcoGaN™ HEMT [6]. Group 2: Performance Improvements - CMTI has been increased to 150V/ns, which is 1.5 times higher than conventional products, preventing malfunctions from high slew rates typical of GaN HEMT switching [5]. - The minimum pulse width has been reduced to 65ns, which is 33% less than conventional products, allowing for stable operation at higher frequencies while minimizing power loss [5]. - The output-side current consumption is industry-leading at 0.5mA (Max), which reduces standby power and enhances overall system efficiency [6]. Group 3: Applications and Availability - The BM6GD11BFJ-LB is applicable in industrial equipment such as power supplies for PV inverters, energy storage systems, communication base stations, servers, and industrial motors, as well as consumer devices like AC adapters, PCs, TVs, refrigerators, and air conditioners [7]. - The product is available through online distributors like DigiKey™ and Mouser™, with a sample price of $4.0 per unit (excluding tax) [7].