Core Viewpoint - Navitas Semiconductor has launched its 5th-generation GeneSiC technology platform, featuring a new High Voltage SiC Trench-Assisted Planar MOSFET technology that delivers an industry-leading 1200V line of MOSFETs, enhancing its position in AI data centers, grid and energy infrastructure, and industrial electrification [1][6]. Group 1: Technology Advancements - The 5th generation MOSFET platform features the most compact TAP architecture yet, combining the ruggedness of a planar gate with superior performance enabled by a trench structure, enhancing efficiency and reliability for high-voltage power electronics [2][4]. - A 35% improvement in the RDS,ON × QGD figure of merit compared to the previous generation 1200V technology significantly reduces switching losses, allowing for cooler operation and higher frequency in demanding power stages [3]. - The technology achieves a ~25% improvement in the QGD / QGS ratio, ensuring immunity against parasitic turn-on and providing robust gate drive in high-noise environments [4]. Group 2: Performance and Reliability - The 5th generation technology optimizes the RDS(ON) × EOSS characteristic and integrates a "Soft Body-Diode" technology to enhance system stability by minimizing electromagnetic interference (EMI) and ensuring smoother commutation during high-speed switching cycles [5]. - AEC-Plus grade qualification ensures long-term stability and durability for applications in AI data centers and energy infrastructure, with significant reliability benchmarks highlighted by the company [6][8]. Group 3: Future Developments - Navitas plans to announce new products within the 5th generation technology platform in the coming months, indicating ongoing innovation and product development [7].

Core Insights - Vishay Intertechnology has launched two new 1200 V MOSFET power modules aimed at enhancing efficiency and reliability for medium to high frequency applications across various sectors including automotive, energy, industrial, and telecom systems [1][2]. Product Features - The new power modules, VS-MPY038P120 and VS-MPX075P120, integrate the latest generation of silicon carbide (SiC) MOSFETs along with an NTC thermistor for temperature sensing and fast intrinsic SiC diodes, resulting in reduced switching losses and increased efficiency for applications such as solar inverters and electric vehicle chargers [2][3]. - The rugged transfer mold technology used in these modules allows for longer product lifecycles and improved thermal resistance compared to legacy solutions, while their low profile design reduces parasitic inductance and electromagnetic interference (EMI) [3][4]. - The VS-MPY038P120 features a full-bridge inverter topology with an on-resistance of 38 mΩ and a continuous drain current of 35 A at +80 °C, while the VS-MPX075P120 has a three-phase inverter topology with an on-resistance of 75 mΩ and a continuous drain current of 18 A [4]. Availability - Samples and production quantities of the new power modules are currently available, with lead times of 13 weeks [5]. Company Overview - Vishay Intertechnology is recognized for having one of the largest portfolios of discrete semiconductors and passive electronic components, serving a wide range of markets including automotive, industrial, computing, and telecommunications [6].