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Huawei's 2022 patent details novel technique to make 2-nm-class chips without EUV tool
Yahoo Financeยท 2025-12-04 09:30
Core Viewpoint - Huawei Technologies is making strides in advanced chip technology with a pending patent for a metal integration technique that could enable the production of 2-nanometre class chips without relying on extreme ultraviolet (EUV) lithography tools, which are restricted due to US sanctions [1][2][6]. Group 1: Patent and Technology - The patent, submitted in June 2022 and made public in January 2023, focuses on a method for integrating narrow metal structures using deep ultraviolet (DUV) technology, which is essential for achieving 2nm-class chip specifications [2][3]. - The proposed technique aims to circumvent US sanctions that prevent access to advanced EUV tools from ASML, thereby providing a potential pathway for China to enhance its semiconductor manufacturing capabilities [2][6]. - Huawei's method employs a variation of self-aligned quadruple patterning (SAQP) and utilizes a "spacer-defined patterning" scheme with dual hard-mask materials, allowing for the creation of interwoven metal lines and reducing the need for ultra-tight lithographic overlay [6]. Group 2: Industry Context and Implications - The patent has garnered significant attention as it presents a potential solution to overcome challenges faced by Chinese semiconductor manufacturers in competing with Taiwan Semiconductor Manufacturing Company (TSMC), which currently leads in 2-nm process technology [5]. - A Chinese chip industry veteran has suggested that 14-nm logic chips could potentially match the performance of Nvidia's 4-nm chips through innovative integration with advanced memory and architecture, indicating a shift in competitive dynamics within the semiconductor industry [4]. - Huawei's recent innovations also include advancements aimed at improving AI training efficiency and developing next-generation storage chips with enhanced capacity and performance, further solidifying its position in the tech landscape [5].