Core Insights - Navitas Semiconductor has announced the availability of new 3300V and 2300V ultra-high voltage (UHV) silicon carbide (SiC) products, enhancing efficiency and reliability for applications in AI data centers, energy infrastructure, and industrial electrification [2][10] Product Features - The new SiC products utilize Navitas' fourth-generation GeneSiC™ platform, featuring Trench-Assisted Planar (TAP) technology that improves voltage blocking capabilities and reduces voltage stress compared to traditional SiC MOSFETs [3][4] - The TAP architecture enhances long-term reliability and avalanche robustness, with optimal source contact for better cell-pitch density and lower on-resistance at elevated temperatures [4] Packaging Innovations - Navitas is expanding its product portfolio with flexible packaging formats, including the SiCPAK™ G+ power module, designed for high power density and reliability [5] - The SiCPAK™ G+ modules utilize epoxy-resin potting technology, resulting in over 60% improvement in power cycling lifetime and more than 10 times better thermal shock reliability compared to silicone-gel potted modules [6] Reliability Testing - Navitas has established an industry-first reliability qualification benchmark, AEC-Plus, which exceeds existing AEC-Q101 and JEDEC standards, demonstrating a commitment to rigorous product validation for demanding applications [8] - The new SiC MOSFETs are also available as Known Good Die (KGD) products, allowing for stringent production screening and ensuring high quality for critical ultra-high voltage applications [9] Market Positioning - The introduction of the 3300V and 2300V SiC product line is expected to set a new standard for efficiency and reliability in solid-state transformers and energy storage systems [10][11] - The company aims to advance towards 10 kV SiC solutions, combining proprietary technology with innovative packaging to enhance performance and robustness [11]