Core Insights - Kioxia has introduced new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices utilizing 4-bit-per-cell QLC technology, aimed at high-capacity mobile storage needs [1] - The new devices leverage Kioxia's 8th generation BiCS FLASH™ 3D flash memory technology, offering significant performance improvements over previous generations [1] Performance Enhancements - Kioxia's QLC UFS devices achieve a 25% increase in sequential write speeds, a 90% increase in random read speeds, and a 95% increase in random write speeds compared to the previous UFS 4.0 generation [1] - The Write Amplification Factor (WAF) is improved by a maximum of 3.5 times when WriteBooster is disabled [1] Product Specifications - The new UFS 4.1 devices are available in 512-gigabyte (GB) and 1-terabyte (TB) capacities, featuring a reduced package size from 11×13 mm to 9×13 mm [1] - The devices are compliant with the UFS 4.1 specification and are backward-compatible with UFS 4.0 and UFS 3.1 [1] Technological Innovations - Kioxia's 8th generation BiCS FLASH™ introduces CMOS directly Bonded to Array (CBA) technology, marking a significant advancement in flash memory design [1] - The new devices are well-suited for a variety of applications, including smartphones, tablets, PCs, networking, AR/VR, IoT, and AI-enabled devices [1]