Core Insights - Everspin Technologies has launched the UNISYST MRAM family, a new generation of unified memory aimed at enhancing embedded systems by combining code storage and data memory in a high-density, non-volatile architecture [1] Product Overview - UNISYST MRAM is designed to address the limitations of traditional NOR flash memory, particularly as process nodes shrink below 40 nanometers and workloads increase [1] - The initial offering will include densities ranging from 128 megabits to 2 gigabits, utilizing a standard xSPI interface that operates up to octal SPI at 200MHz [1] - The devices will feature AEC-Q100 Grade 1 qualification and a minimum of 10-year data retention at extreme temperatures, making them suitable for automotive, aerospace, industrial, and edge AI applications [1] Performance Metrics - UNISYST MRAM boasts write endurance up to 10 times higher than typical NOR flash, with read bandwidth of up to 400 MB/s and write bandwidth of approximately 90 MB/s, which is over 400 times faster than NOR flash [1] - The architecture is designed to support software-defined systems that require frequent reconfiguration while maintaining data integrity across power cycles [1] Target Applications - Key use cases for UNISYST include industrial and casino gaming for high-traffic logging, automotive control and logging systems, military and aerospace applications for FPGA configuration, and edge AI for fast AI weight updates [1] Market Position - The launch of UNISYST represents a strategic expansion of Everspin's MRAM portfolio, positioning the company as a significant player in a multibillion-dollar market by unifying code storage and data memory [1] - Engineering samples of UNISYST are expected to be available in Q4 2026, with a formal launch planned at Embedded World 2026 [1]