台积电“退出”，谁来接棒？

Core Viewpoint - Navitas Semiconductor's recent collaboration document has caused significant disruption in the global GaN semiconductor industry, revealing TSMC's plan to exit GaN wafer production by July 2027, while Navitas partners with PSMC to advance 8-inch silicon-based GaN technology mass production [1] Group 1: TSMC's GaN Journey - TSMC has been a key player in the commercialization of GaN technology since 2011, leveraging its CMOS manufacturing experience to develop GaN-on-Si technology [2] - By 2015, TSMC achieved mass production of GaN-on-Si, establishing a comprehensive technology platform across various voltage levels, including 650V, 100V, and 40V [2][3] - TSMC captured 40% of the global GaN wafer foundry market by 2023, establishing a competitive landscape with X-Fab and Episil [3] Group 2: TSMC's Withdrawal - TSMC announced its decision to gradually exit the GaN business over the next two years, citing a reassessment of business priorities and a shift towards higher-margin sectors like AI chips [4][5] - The company’s GaN production capacity was relatively small, with a monthly output of only 3,000-4,000 6-inch wafers, leading to minimal revenue contribution [4] - Increased competition and price wars, particularly from Chinese IDM manufacturers like Innoscience, have pressured TSMC's profit margins in the GaN market [6] Group 3: Supply Chain Risks - Recent export controls on gallium and germanium by the Chinese government have introduced uncertainties in the supply chain, impacting costs for GaN production [7][8] Group 4: Industry Transition - Following TSMC's exit, Navitas Semiconductor plans to transition its production to PSMC, utilizing 8-inch lines to produce GaN-on-Si devices, targeting the 100V to 650V voltage range [12] - Infineon is advancing its 300mm GaN wafer IDM production strategy, aiming to capitalize on the growing demand for GaN semiconductors [13][14] - The shift in the industry landscape may accelerate the transition from "technological breakthroughs" to "scale implementation" in the GaN sector [15]