立昂微子公司拟投建年产180万片12英寸重掺衬底片项目 计划总投资22.62亿元

Core Viewpoint - The company Lian Microelectronics (605358.SH) has signed an investment agreement to build a project for the annual production of 1.8 million pieces of 12-inch heavily doped substrate wafers, with a total planned investment of 2.262 billion yuan [1][2] Group 1: Investment and Project Details - The project will be constructed within the existing factory of the subsidiary Jinrui Hong Microelectronics, with a total investment of 2.262 billion yuan, including 2.196 billion yuan for fixed assets [1] - The new project aims to enhance the production capacity of heavily doped silicon wafers, which are essential for high-end power devices [2] Group 2: Market Demand and Applications - The 12-inch heavily doped silicon wafers produced will cater to a wide range of applications, including AI server uninterruptible power supplies, energy storage inverters, charging piles, industrial electronics, servo drivers, consumer electronics, automotive electronics, home appliances, embedded systems, and industrial control [2] - The existing production capacity of Jinrui Hong Microelectronics is rapidly approaching full capacity, necessitating this expansion to meet the growing market demand, particularly for specialized specifications such as heavily doped arsenic and phosphorus wafers [2] Group 3: Strategic Implications - The new project will complement the existing annual production of 1.8 million pieces of 12-inch semiconductor silicon epitaxial wafers, creating a synergistic effect between upstream and downstream production [2] - This expansion is expected to optimize the company's product structure, enhance product diversity, and improve overall competitiveness in the integrated circuit market [2]

Lion-立昂微子公司拟投建年产180万片12英寸重掺衬底片项目 计划总投资22.62亿元 - Reportify