Core Viewpoint - The strategic cooperation agreement between Tianyu Semiconductor and Qinghe Crystal Semiconductor Technology aims to leverage their respective strengths in silicon carbide (SiC) materials and bonding equipment to develop advanced bonding materials and optimize production processes [1][2][3] Group 1: Cooperation Details - The cooperation will focus on process development for bonding materials including SiC, SOI, POI, and large-size (12-inch and above) SiC composite heat dissipation substrates [1] - Qinghe Crystal will provide equipment customization, optimization, and process support for various bonding substrates, including single-crystal and multi-crystal SiC [2] - The agreement includes provisions for equipment improvement and technical support, with both parties committed to enhancing manufacturing capabilities and addressing technical issues collaboratively [2] Group 2: Intellectual Property and Collaboration - Each party retains independent ownership of any intellectual property developed during the collaboration [3] - During the cooperation period, the company will prioritize collaboration with Qinghe Crystal for complete line projects and equipment procurement, unless Qinghe Crystal's equipment fails to meet specified technical or production requirements [3] - The board believes that this partnership will create a mutually beneficial relationship, enhancing the company's capabilities in large-size composite substrates and solidifying its market position [3]
天域半导体(02658.HK)拟携手青禾晶元共同开展键合材料(包括键合碳化硅(SiC)等工艺开发及技术迭代