3D DRAM，蓄势待发

Core Viewpoint - The article discusses the impact of the U.S. export restrictions on High Bandwidth Memory (HBM) on the domestic semiconductor industry in China, highlighting the shift towards alternative high-bandwidth storage solutions like 3D DRAM as a response to these challenges [1][21]. Group 1: Impact of HBM Restrictions - The U.S. Department of Commerce imposed stricter export controls on HBM and related semiconductor manufacturing equipment, affecting 140 Chinese entities [1]. - The restrictions particularly target HBM products with a memory bandwidth density exceeding 2GB/s/mm², disrupting the supply chain for advanced storage in China [1]. - Concerns arose that these limitations would significantly pressure the domestic semiconductor industry, especially the AI sector reliant on HBM [1]. Group 2: Emergence of 3D DRAM - 3D DRAM has gained attention among domestic storage manufacturers as a potential alternative to HBM, leveraging advancements in scaling technology [2][3]. - Unlike HBM, which is a stacked-die memory, 3D DRAM aims to increase storage density and reduce production costs by evolving from 2D to 3D structures [4][10]. - The transition to 3D DRAM involves vertical stacking of memory cells, which can enhance performance and efficiency while addressing the limitations of traditional DRAM structures [9][10]. Group 3: Industry Developments and Competition - Major manufacturers like Samsung, SK Hynix, and Micron are actively developing 3D DRAM technologies, with Samsung planning to unveil its initial version this year and achieve mass production by 2030 [11][13]. - SK Hynix has demonstrated a 5-layer stacked 3D DRAM prototype with a yield rate of 56.1%, indicating progress in this competitive landscape [13]. - Micron has been researching 3D DRAM since 2019 and holds a significant number of patents in this area, positioning itself as a key player in the market [16]. Group 4: Technological Innovations - Innovations such as the use of IGZO materials in 3D DRAM are being explored to address bandwidth and latency challenges, enhancing the performance of DRAM chips [16]. - Neo Semiconductor has introduced a technology called 3D X-DRAM, which aims to overcome capacity limitations and achieve high throughput for AI processing [17]. - Domestic companies like Changxin Storage and Yangtze Memory Technologies are also making strides in 3D DRAM development, indicating a growing interest in this technology within China [19][21]. Group 5: Future Outlook - The demand for 3D DRAM is expected to rise rapidly in China as traditional HBM faces restrictions, with 3D DRAM seen as a key direction for overcoming bandwidth bottlenecks [21]. - The global supply chain dynamics and tariff policies are creating opportunities for domestic DRAM manufacturers to innovate and compete effectively in the market [21].