Core Viewpoint - Samsung Electronics and SK Hynix are set to increase production costs for the next generation of High Bandwidth Memory (HBM) due to larger core die sizes and outsourcing of base die production, which they may struggle to pass on to customers as Micron begins supplying HBM to Nvidia, breaking SK Hynix's previous monopoly [1][2]. Group 1: Production Changes - The number of I/O interfaces has increased in HBM4, leading to a decrease in the number of chips produced per wafer compared to HBM3E, as the core die size expands [2]. - HBM4 will utilize 10nm fifth-generation DRAM, maintaining the same generation as HBM3E, but with I/O numbers increasing from 1024 to 2048, directly impacting production efficiency [2]. Group 2: Cost Implications - Despite an expected slight increase in wafer output for Samsung's HBM4 due to the use of 10nm sixth-generation DRAM, the overall manufacturing costs are anticipated to be higher due to increased process complexity [3]. - The price for HBM4's 12-layer stacked products is projected to exceed $600, while current HBM3 and HBM3E products are priced around $200 and $300, respectively [3]. Group 3: Outsourcing and Collaboration - The shift to using foundries for producing HBM4's base die is a significant factor in rising costs, as previous generations were produced in-house by memory manufacturers [4]. - Major AI chip companies like Nvidia, AMD, and Microsoft are increasingly demanding customized base die, indicating a trend towards collaboration between memory manufacturers and foundries for advanced HBM products [4].
HBM4,变贵了